![Determination of Band Offsets between the High-k Dielectric LaAlO3 Film and the In0.53Ga0.47As Substrate Determination of Band Offsets between the High-k Dielectric LaAlO3 Film and the In0.53Ga0.47As Substrate](https://www-ssrl.slac.stanford.edu/research/highlights_archive/highk_dielectrics_fig4.jpg)
Determination of Band Offsets between the High-k Dielectric LaAlO3 Film and the In0.53Ga0.47As Substrate
![a) VB position analyzed from VB XPS spectra, (b) plots of Kubelka–Munk... | Download Scientific Diagram a) VB position analyzed from VB XPS spectra, (b) plots of Kubelka–Munk... | Download Scientific Diagram](https://www.researchgate.net/publication/312541257/figure/fig3/AS:452411711070214@1484874765272/a-VB-position-analyzed-from-VB-XPS-spectra-b-plots-of-Kubelka-Munk-function-vs-the.png)
a) VB position analyzed from VB XPS spectra, (b) plots of Kubelka–Munk... | Download Scientific Diagram
X-ray photoelectron spectroscopy analysis and band offset determination of CeO2 deposited on epitaxial (100), (110), and (111)Ge
![Effect of Surface Defect States on Valence Band and Charge Separation and Transfer Efficiency | Scientific Reports Effect of Surface Defect States on Valence Band and Charge Separation and Transfer Efficiency | Scientific Reports](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fsrep32457/MediaObjects/41598_2016_Article_BFsrep32457_Fig4_HTML.jpg)
Effect of Surface Defect States on Valence Band and Charge Separation and Transfer Efficiency | Scientific Reports
![Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-Ray photoemission spectroscopy | Scientific Reports Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-Ray photoemission spectroscopy | Scientific Reports](https://media.springernature.com/m685/springer-static/image/art%3A10.1038%2Fs41598-019-53236-9/MediaObjects/41598_2019_53236_Fig1_HTML.png)
Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-Ray photoemission spectroscopy | Scientific Reports
![Elucidation of the highest valence band and lowest conduction band shifts using XPS for ZnO and Zn0.99Cu0.01O band gap changes - ScienceDirect Elucidation of the highest valence band and lowest conduction band shifts using XPS for ZnO and Zn0.99Cu0.01O band gap changes - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S2211379716300043-gr19.jpg)
Elucidation of the highest valence band and lowest conduction band shifts using XPS for ZnO and Zn0.99Cu0.01O band gap changes - ScienceDirect
![Electronic Structures, Bonding Configurations, and Band‐Gap‐Opening Properties of Graphene Binding with Low‐Concentration Fluorine - Duan - 2015 - ChemistryOpen - Wiley Online Library Electronic Structures, Bonding Configurations, and Band‐Gap‐Opening Properties of Graphene Binding with Low‐Concentration Fluorine - Duan - 2015 - ChemistryOpen - Wiley Online Library](https://chemistry-europe.onlinelibrary.wiley.com/cms/asset/844ae9ef-64d7-4205-aee7-e976ce62242b/open201500074-toc-0001-m.png)
Electronic Structures, Bonding Configurations, and Band‐Gap‐Opening Properties of Graphene Binding with Low‐Concentration Fluorine - Duan - 2015 - ChemistryOpen - Wiley Online Library
![X-ray photoelectron spectroscopy study of energy-band alignments of ZnO on buffer layer Lu2O3 - ScienceDirect X-ray photoelectron spectroscopy study of energy-band alignments of ZnO on buffer layer Lu2O3 - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0375960115011172-gr001.jpg)
X-ray photoelectron spectroscopy study of energy-band alignments of ZnO on buffer layer Lu2O3 - ScienceDirect
![Energy band alignment at Cu<sub>2</sub>O/ZnO heterojunctions characterized by <i>in situ</i> x-ray photoelectron spectroscopy Energy band alignment at Cu<sub>2</sub>O/ZnO heterojunctions characterized by <i>in situ</i> x-ray photoelectron spectroscopy](http://cpb.iphy.ac.cn/article/2019/1996/cpb_28_8_087301/cpb_28_8_087301_f4.jpg)
Energy band alignment at Cu<sub>2</sub>O/ZnO heterojunctions characterized by <i>in situ</i> x-ray photoelectron spectroscopy
![Using photoelectron spectroscopy to observe oxygen spillover to zirconia - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/C9CP03322J Using photoelectron spectroscopy to observe oxygen spillover to zirconia - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/C9CP03322J](https://pubs.rsc.org/image/article/2019/CP/c9cp03322j/c9cp03322j-f2_hi-res.gif)
Using photoelectron spectroscopy to observe oxygen spillover to zirconia - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/C9CP03322J
![Extracting band edge profiles at semiconductor heterostructures from hard-x-ray core-level photoelectron spectra | Scientific Reports Extracting band edge profiles at semiconductor heterostructures from hard-x-ray core-level photoelectron spectra | Scientific Reports](https://media.springernature.com/full/springer-static/image/art%3A10.1038%2Fs41598-020-69658-9/MediaObjects/41598_2020_69658_Fig1_HTML.png)
Extracting band edge profiles at semiconductor heterostructures from hard-x-ray core-level photoelectron spectra | Scientific Reports
![Catalysts | Free Full-Text | Unravelling the Mechanisms that Drive the Performance of Photocatalytic Hydrogen Production Catalysts | Free Full-Text | Unravelling the Mechanisms that Drive the Performance of Photocatalytic Hydrogen Production](https://pub.mdpi-res.com/catalysts/catalysts-10-00901/article_deploy/html/images/catalysts-10-00901-ag.png?1597044826)
Catalysts | Free Full-Text | Unravelling the Mechanisms that Drive the Performance of Photocatalytic Hydrogen Production
XPS valence band spectra of (a) BiVO 4 and (b) Au-BiVO 4 . Green lines... | Download Scientific Diagram
A) Valence band (VB) XPS spectra of pure and (C, S, N)-doped TiO2; (B)... | Download Scientific Diagram
![Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing: AIP Advances: Vol 6, No 1 Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing: AIP Advances: Vol 6, No 1](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.4941040&id=images/medium/1.4941040.figures.f1.gif)
Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing: AIP Advances: Vol 6, No 1
![XPS analysis and valence band structure of a low‐dimensional SiO2/Si system after Si+ ion implantation - Zatsepin - 2011 - physica status solidi (a) - Wiley Online Library XPS analysis and valence band structure of a low‐dimensional SiO2/Si system after Si+ ion implantation - Zatsepin - 2011 - physica status solidi (a) - Wiley Online Library](https://onlinelibrary.wiley.com/cms/asset/6a552beb-bd91-436b-92c3-383e0ad5f8e7/mfig002.jpg)